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cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 1/11 MTN20N20F3 cystek product specification n-channel enhancement mode power mosfet MTN20N20F3 description the MTN20N20F3 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the to-263 package is universally preferred for all commercial-industrial applications features ? bv dss =200v ? low on resistance ? simple drive requirement ? fast switching characteristic ? rohs compliant package symbol outline MTN20N20F3 to-263 g gate d drain s source bv dss : 200v r ds(on) : 90m (typ.) i d : 20a g d s
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 2/11 MTN20N20F3 cystek product specification absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage v ds 200 v gate-source voltage v gs 20 v continuous drain current i d 20* a continuous drain current @t c =100c i d 12* a pulsed drain current @ v gs =10v (note 1) i dm 80* a single pulse avalanche energy (note 2) e as 107 mj avalanche current (note 1) i ar 20 a repetitive avalanche energy (note 1) e ar 14 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns w total power dissipation (t c =25 ) linear derating factor p d 140 1.12 w/ c operating junction and storage temperature tj, tstg -55~+150 c *drain current limited by maximum junction temperature note : 1 . repetitive rating; pulse width limited by maximum junction temperature. 2 . i as =20a, v dd =50v, l=0.1mh, r g =25 , starting t j =+25 . 3. i sd 20a, di/dt 100a/ s, v dd bv dss , starting t j =+25 . thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 0.89 c/w thermal resistance, junction-to-ambient, max* r th,j-a 40 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w *when mounted on the minimum pad size (pcb mount).
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 3/11 MTN20N20F3 cystek product specification characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 200 - - v v gs =0, i d =250 a, tj=25 ? bv dss / ? tj - 0.25 - v/ c reference to 25c, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a *g fs - 18 - s v ds =15v, i d =10a i gss - - 100 na v gs = 20 - - 1 v ds =200v, v gs =0 i dss - - 10 a v ds =160v, v gs =0, tj=125 c *r ds(on) - 90 150 m v gs =10v, i d =10a dynamic *qg - 75 - *qgs - 18 - *qgd - 30 - nc i d =20a, v ds =160v, v gs =10v *t d(on) - 50 - *tr - 210 - *t d(off) - 120 - *t f - 180 - ns v ds =100v, i d =20a, v gs =10v, r g =5 ciss - 4500 - coss - 230 - crss - 185 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *i s - - 20 *i sm - - 80 a *v sd - - 1.5 v i s =20a, v gs =0v *trr - 230 - ns *qrr - 1.2 - c v gs =0, i f =20a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTN20N20F3 to-263 (rohs compliant) 800 pcs/ tape & reel
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 4/11 MTN20N20F3 cystek product specification typical characteristics static drain-source on-state resistance vs drain current 80 90 100 110 120 0.1 1 10 100 drain current-i d (a) static drain-source on-state resistance-r ds(on) (m) v gs =10v static drain-source on-resistance vs ambient temperature 0 0.5 1 1.5 2 2.5 3 3.5 -100 -50 0 50 100 150 200 ambient temperature-ta(c) static drain-source on-state resistance-rds(on)() id=3a, vgs=10v static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 450 500 4681 0 1 2 body diode forward voltage variation vs source current and temperature 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 source drain voltage -v sd (v) reverse drain current-i dr (a) v gs =0v ta=25c ta=150c ta=25c i d =10a gate-source voltage-v gs (v) static drain-source on-state resistance-r ds( on) (m) capacitance vs reverse voltage 100 1000 10000 0 5 10 15 20 25 30 drain-to-source voltage-v ds (v) capacitance-(pf) ciss coss crss f=1mhz brekdown voltage vs ambient temperature 200 220 240 260 280 300 -100 -50 0 50 100 150 200 ambient temperature-tj(c) drain-source breakdown voltage bv dss (v) i d =250a, v gs =0v
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 5/11 MTN20N20F3 cystek product specification typical characteristics(cont.) maximum safe operating area 0.01 0.1 1 10 100 1 10 100 1000 drain-source voltage -v ds (v) drain current --- i d (a) operation in this area is limited by rds(on) dc 10ms 100ms 1ms 100 s 10 single pulse tc=25c; tj=150c gate charge characteristics 0 2 4 6 8 10 12 0 50 100 total gate charge---qg(nc) gate-source voltage---v gs (v) i d =20a v ds =40v v ds =100v v ds =160v maximum drain current vs case temperature 0 5 10 15 20 25 25 50 75 100 125 150 175 case temperature---t c (c) maximum drain current---i d (a)
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 6/11 MTN20N20F3 cystek product specification typical characteristics(cont.) transient thermal response curves 0.001 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.z jc (t)=0.89c/w max. 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t)
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 7/11 MTN20N20F3 cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 8/11 MTN20N20F3 cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 9/11 MTN20N20F3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 10/11 MTN20N20F3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c801f3 issued date : 2010.05.18 revised date : page no. : 11/11 MTN20N20F3 cystek product specification to-263 dimension style : pin 1.gate 2.drain 3.source 3-lead plastic surface mounted package cystek package code : f3 marking : 20n20 device name date code *:typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.3800 0.4050 9.65 10.29 i 0.0500 0.0700 1.27 1.78 b 0.3300 0.3700 8.38 9.40 j - *0.1000 - *2.54 c - 0.0550 - 1.40 k 0.0450 0.0550 1.14 1.40 d 0.5750 0.6250 14.61 15.88 l 0.0200 0.0390 0.51 0.99 e 0.1600 0.1900 4.06 4.83 1 - - 6 8 f 0.0450 0.0550 1.14 1.40 2 - - 6 8 g 0.0900 0.1100 2.29 2.79 3 - - 0 5 h 0.0180 0.0290 0.46 0.74 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . a b c d 123 k l j g h e f 2 1 2 3 i

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